SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 3-Pin TO-247 onsemi NVHL040N120SC1

NVHL040N120SC1 SiC N-Channel MOSFET Transistor, 60 A, 1200 V, 3-Pin TO-247 onsemi
NVHL040N120SC1
NVHL040N120SC1
onsemi

Product Information

Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
NVH
Channel Type:
N
Maximum Gate Threshold Voltage:
4.3V
Maximum Drain Source Resistance:
0.04 Ω
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
60 A
Transistor Material:
SiC
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
56mOhm @ 35A, 20V
title:
NVHL040N120SC1
Vgs(th) (Max) @ Id:
4.3V @ 10mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
348W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
18 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1781 pF @ 800 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
106 nC @ 20 V
Supplier Device Package:
TO-247-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
60A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NVHL040
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is SiC N-Channel MOSFET Transistor 60 A 1200 V 3-Pin TO-247 manufactured by onsemi. The manufacturer part number is NVHL040N120SC1. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product nvh, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4.3v of maximum gate threshold voltage. It provides up to 0.04 ω maximum drain source resistance. The package is a sort of to-247. It consists of 1 elements per chip. While 60 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 56mohm @ 35a, 20v. The typical Vgs (th) (max) of the product is 4.3v @ 10ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -15v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 348w (tc). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 1781 pf @ 800 v. The product is automotive, a grade of class. The maximum gate charge and given voltages include 106 nc @ 20 v. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to nvhl040, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet - NVHL040N120SC1(Technical Reference)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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NVHL040N120SC1(Datasheets)
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Packing quantity increase 25/Jun/2021(PCN Packaging)

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FAQs

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