Automotive Standard:
No
Maximum Power Dissipation Pd:
78W
Maximum Drain Source Voltage Vds:
80V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
30nC
Series:
NTMFS006N08MC
Maximum Gate Source Voltage Vgs:
20 V
Forward Voltage Vf:
1.2V
Channel Type:
Type N
Width:
5.1 mm
Length:
6.1mm
Package Type:
PQFN
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
6mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
32A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
8
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1W (Ta), 78W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2300 pF @ 40 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C:
9.3A (Ta), 82A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS006
ECCN:
EAR99
