Forward Voltage Vf:
-1.2V
Width:
3.7 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
47nC
Package Type:
SOT-223
Maximum Continuous Drain Current Id:
7.5A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
54mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
30V
Channel Type:
Type P
Length:
6.7mm
Standards/Approvals:
No
Pin Count:
4
Mount Type:
Surface
Maximum Power Dissipation Pd:
3W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
NDT
Height:
1.7mm
Minimum Operating Temperature:
-65°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
30mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NDT456P Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/244225
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1440 pF @ 15 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDT456
ECCN:
EAR99
