Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
47 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.7mm
Width:
3.7mm
Length:
6.7mm
Minimum Gate Threshold Voltage:
1V
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
7.5 A
Transistor Material:
Si
Maximum Drain Source Resistance:
54 mΩ
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
30mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
67 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
NDT456P Models
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/244225
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1440 pF @ 15 V
standardLeadTime:
10 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223-4
Current - Continuous Drain (Id) @ 25°C:
7.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NDT456
ECCN:
EAR99
This is P-Channel MOSFET 7.5 A 30 V 3 + Tab-Pin SOT-223 manufactured by onsemi. The manufacturer part number is NDT456P. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 47 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.7mm. Furthermore, the product is 3.7mm wide. Its accurate length is 6.7mm. Whereas its minimum gate threshold voltage includes 1v. The package is a sort of sot-223. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 7.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 54 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 30mohm @ 7.5a, 10v. The maximum gate charge and given voltages include 67 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (ta). The product's input capacitance at maximum includes 1440 pf @ 15 v. It has a long 10 weeks standard lead time. sot-223-4 is the supplier device package value. The continuous current drain at 25°C is 7.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ndt456, a base product number of the product. The product is designated with the ear99 code number.
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