SiC N-Channel SiC Power Module, 12 A, 1200 V, 3-Pin HiP247 STMicroelectronics SCTWA10N120
Product Information
Maximum Drain Source Voltage:
1200 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Series:
SCTWA10N120
Channel Type:
N
Maximum Gate Threshold Voltage:
3.5V
Maximum Drain Source Resistance:
0.55 Ω
Package Type:
HiP247
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12 A
Transistor Material:
SiC
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.5V @ 250µA (Typ)
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
690mOhm @ 6A, 20V
edacadModel:
SCTWA10N120 Models
Gate Charge (Qg) (Max) @ Vgs:
21 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/7313409
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
300 pF @ 1000 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HiP247™ Long Leads
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTWA10
ECCN:
EAR99
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This is SiC N-Channel SiC Power Module 12 A 1200 V 3-Pin HiP247 manufactured by STMicroelectronics. The manufacturer part number is SCTWA10N120. It has a maximum of 1200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product sctwa10n120, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 3.5v of maximum gate threshold voltage. It provides up to 0.55 ω maximum drain source resistance. The package is a sort of hip247. It consists of 1 elements per chip. While 12 a of maximum continuous drain current. The transistor is manufactured from highly durable sic material. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.5v @ 250µa (typ). The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 690mohm @ 6a, 20v. The maximum gate charge and given voltages include 21 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). The product's input capacitance at maximum includes 300 pf @ 1000 v. hip247™ long leads is the supplier device package value. The continuous current drain at 25°C is 12a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sctwa10, a base product number of the product. The product is designated with the ear99 code number.
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