Automotive Standard:
No
Maximum Power Dissipation Pd:
240W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
650V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
73nC
Series:
SCTW35
Maximum Gate Source Voltage Vgs:
22 V
Height:
15.75mm
Width:
5.15 mm
Length:
14.8mm
Package Type:
Hip-247
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
45mΩ
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
45A
Channel Type:
Type N
Maximum Operating Temperature:
200°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
67mOhm @ 20A, 20V
title:
SCTW35N65G2V
Vgs(th) (Max) @ Id:
5V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
SCTW35N65G2V Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V, 20V
edacadModelUrl:
/en/models/11591123
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
240W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
32 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
1370 pF @ 400 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
73 nC @ 20 V
Supplier Device Package:
HiP247™
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCTW35
ECCN:
EAR99
