STMicroelectronics STB18N60M6
Product Information
Typical Gate Charge @ Vgs:
16.8 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
±25 V
Maximum Gate Threshold Voltage:
4.75V
Height:
4.37mm
Width:
9.35mm
Length:
10.4mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
13 A
Minimum Gate Threshold Voltage:
3.25V
Forward Diode Voltage:
1.6V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.75V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
280mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16.8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB18N60M6 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/9997319
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
650 pF @ 100 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ M6
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB18
ECCN:
EAR99
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Yes. We ship STB18N60M6 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB18N60M6. With a typical gate charge at Vgs includes 16.8 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 110 w maximum power dissipation. It features a maximum gate source voltage of ±25 v. The product carries 4.75v of maximum gate threshold voltage. In addition, the height is 4.37mm. Furthermore, the product is 9.35mm wide. Its accurate length is 10.4mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 13 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3.25v. Its forward diode voltage is 1.6v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.75v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 280mohm @ 6.5a, 10v. The maximum gate charge and given voltages include 16.8 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 110w (tc). The product's input capacitance at maximum includes 650 pf @ 100 v. It has a long 14 weeks standard lead time. The product mdmesh™ m6, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 13a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb18, a base product number of the product. The product is designated with the ear99 code number.
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