Forward Voltage Vf:
0.8V
Width:
5.1 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
130nC
Package Type:
VSON
Maximum Continuous Drain Current Id:
157A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
4.8mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
80V
Channel Type:
Type N
Length:
6.1mm
Standards/Approvals:
No
Pin Count:
8
Mount Type:
Surface
Maximum Power Dissipation Pd:
195W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
NexFET
Height:
1.05mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs:
62 nC @ 10 V
Vgs(th) (Max) @ Id:
3.3V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
CSD19502Q5BT Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
edacadModelUrl:
/en/models/5978301
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.1W (Ta), 195W (Tc)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
4870 pF @ 40 V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON-CLIP (5x6)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
100A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD19502
ECCN:
EAR99
