Forward Voltage Vf:
1.6V
Width:
4.6 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
36nC
Package Type:
I2PAK
Maximum Continuous Drain Current Id:
22A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
150mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
650V
Channel Type:
Type N
Length:
10.4mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
170W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
25 V
Series:
STI28
Height:
9.3mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
150mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STI28N60M2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/7667960
Package:
Tube
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1440 pF @ 100 V
standardLeadTime:
16 Weeks
Mounting Type:
Through Hole
Series:
MDmesh™ M2
Supplier Device Package:
TO-262 (I2PAK)
Current - Continuous Drain (Id) @ 25°C:
22A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STI28
ECCN:
EAR99
