Automotive Standard:
No
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
600V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
11.8nC
Series:
SuperMESH
Maximum Gate Source Voltage Vgs:
±30 V
Forward Voltage Vf:
1.6V
Height:
2.4mm
Width:
6.6 mm
Length:
10.1mm
Package Type:
TO-252
Minimum Operating Temperature:
-55°C
Maximum Drain Source Resistance Rds:
3.6Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
2.4A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 50µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.2A, 10V
edacadModel:
STD3NK60ZT4 Models
Gate Charge (Qg) (Max) @ Vgs:
11.8 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/721350
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
311 pF @ 25 V
Mounting Type:
Surface Mount
Series:
SuperMESH™
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
2.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STD3NK60
ECCN:
EAR99
