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STMicroelectronics STU75N3LLH6

STU75N3LLH6 STMicroelectronics
STU75N3LLH6
STMicroelectronics

Product Information

Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
17 nC @ 4.5 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Series:
DeepGate, STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
6.9mm
Width:
2.4mm
Length:
6.6mm
Maximum Drain Source Resistance:
8.4 mΩ
Package Type:
TO-251
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
75 A
Minimum Gate Threshold Voltage:
1V
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Rds On (Max) @ Id, Vgs:
5.9mOhm @ 37.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
23.8 nC @ 4.5 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2030 pF @ 10 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
TO-251 (IPAK)
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STU75N
ECCN:
EAR99
RoHs Compliant
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This is manufactured by STMicroelectronics. The manufacturer part number is STU75N3LLH6. It has a maximum of 30 v drain source voltage. With a typical gate charge at Vgs includes 17 nc @ 4.5 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 60 w maximum power dissipation. The product deepgate, stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 2.5v of maximum gate threshold voltage. In addition, the height is 6.9mm. Furthermore, the product is 2.4mm wide. Its accurate length is 6.6mm. It provides up to 8.4 mω maximum drain source resistance. The package is a sort of to-251. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 75 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 1v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +175 °c. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. It has a maximum Rds On and voltage of 5.9mohm @ 37.5a, 10v. The maximum gate charge and given voltages include 23.8 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2030 pf @ 10 v. The product deepgate™, stripfet™ vi, is a highly preferred choice for users. to-251 (ipak) is the supplier device package value. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 60w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stu75n, a base product number of the product. The product is designated with the ear99 code number.

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N-Channel 30V, 4.2mOhm, 75A, DPAK STripFET VI DeepGATE Power MOSFET(Technical Reference)
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Mult Dev OBS 2/Apr/2020(PCN Obsolescence/ EOL)
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Mult Dev OBS 24/Mar/2020(PCN Obsolescence/ EOL)

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