Forward Voltage Vf:
1.2V
Width:
6.2 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
61nC
Package Type:
TO-252
Maximum Continuous Drain Current Id:
80A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
8mΩ
Maximum Operating Temperature:
175°C
Maximum Drain Source Voltage Vds:
100V
Channel Type:
Type N
Length:
6.6mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Surface
Maximum Power Dissipation Pd:
120W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
STripFET H7
Height:
2.4mm
Minimum Operating Temperature:
-55°C
Manufacturer Standard Lead Time:
44 Weeks
Detailed Description:
N-Channel 100V 80A (Tc) 120W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD100
Gate Charge (Qg) (Max) @ Vgs:
61nC @ 10V
Rds On (Max) @ Id, Vgs:
8mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4369pF @ 50V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VII
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Customer Reference:
Power Dissipation (Max):
120W (Tc)
Technology:
MOSFET (Metal Oxide)
