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STMicroelectronics STD9N60M2

STD9N60M2 STMicroelectronics
STD9N60M2
STD9N60M2
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Width:
6.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
650 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10 nC @ 10 V
Channel Type:
N
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
60 W
Series:
MDmesh M2
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
2.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
780 mΩ
Manufacturer Standard Lead Time:
38 Weeks
Detailed Description:
N-Channel 600V 5.5A (Tc) 60W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD9N60
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Rds On (Max) @ Id, Vgs:
780mOhm @ 3A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
320pF @ 100V
Mounting Type:
Surface Mount
Series:
MDmesh™ II Plus
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
5.5A (Tc)
Customer Reference:
Power Dissipation (Max):
60W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STD9N60M2. While 5.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.2mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 10 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 60 w maximum power dissipation. The product mdmesh m2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 2.4mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 780 mω maximum drain source resistance. It has typical 38 weeks of manufacturer standard lead time. It features n-channel 600v 5.5a (tc) 60w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: std9n60. The maximum gate charge and given voltages include 10nc @ 10v. It has a maximum Rds On and voltage of 780mohm @ 3a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 600v drain to source voltage. The maximum Vgs rate is ±25v. The product's input capacitance at maximum includes 320pf @ 100v. The product mdmesh™ ii plus, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 5.5a (tc). The product carries maximum power dissipation 60w (tc). This product use mosfet (metal oxide) technology.

pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
ST*9N60M2 N-channel Low Qg Power MOSFET(Technical Reference)
pdf icon
ST(D,P,U)9N60M2(Datasheets)

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