STMicroelectronics SCT30N120
Product Information
Maximum Drain Source Voltage:
1200 V
Typical Gate Charge @ Vgs:
105 nC @ 20 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 W
Maximum Gate Source Voltage:
-10 V, +25 V
Height:
20.15mm
Width:
5.15mm
Length:
15.75mm
Maximum Drain Source Resistance:
100 mΩ
Package Type:
HiP247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
45 A
Transistor Material:
Si
Forward Diode Voltage:
3.5V
Channel Type:
N
Maximum Operating Temperature:
+200 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.6V @ 1mA (Typ)
Operating Temperature:
-55°C ~ 200°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
105 nC @ 20 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
SCT30N120 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
edacadModelUrl:
/en/models/5015655
Package:
Tube
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -10V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
270W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1700 pF @ 400 V
standardLeadTime:
52 Weeks
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
HiP247™
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
SCT30
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics SCT30N120. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics SCT30N120.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12004104 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12004104.
Yes. We ship SCT30N120 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is SCT30N120. It has a maximum of 1200 v drain source voltage. With a typical gate charge at Vgs includes 105 nc @ 20 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 270 w maximum power dissipation. It features a maximum gate source voltage of -10 v, +25 v. In addition, the height is 20.15mm. Furthermore, the product is 5.15mm wide. Its accurate length is 15.75mm. It provides up to 100 mω maximum drain source resistance. The package is a sort of hip247. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 45 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Its forward diode voltage is 3.5v . The product is available in [Cannel Type] channel. It has a maximum operating temperature of +200 °c. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.6v @ 1ma (typ). The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 100mohm @ 20a, 20v. The maximum gate charge and given voltages include 105 nc @ 20 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 20v. It is shipped in tube package . The product has a 1200 v drain to source voltage. The maximum Vgs rate is +25v, -10v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 270w (tc). The product's input capacitance at maximum includes 1700 pf @ 400 v. It has a long 52 weeks standard lead time. hip247™ is the supplier device package value. The continuous current drain at 25°C is 40a (tc). This product use sicfet (silicon carbide) technology. Moreover, it corresponds to sct30, a base product number of the product. The product is designated with the ear99 code number.
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