Automotive Standard:
No
Maximum Power Dissipation Pd:
25W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
600V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
18.8nC
Maximum Drain Source Resistance Rds:
2Ω
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.6V
Height:
9.3mm
Width:
4.6 mm
Length:
10.4mm
Package Type:
TO-220
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
4A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
2Ohm @ 2A, 10V
title:
STP4NK60ZFP
Vgs(th) (Max) @ Id:
4.5V @ 50µA
REACH Status:
REACH Unaffected
edacadModel:
STP4NK60ZFP Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1578384
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
25W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
510 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperMESH™
Gate Charge (Qg) (Max) @ Vgs:
26 nC @ 10 V
Supplier Device Package:
TO-220FP
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP4NK60
ECCN:
EAR99
