Automotive Standard:
No
Maximum Power Dissipation Pd:
140W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
1500V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
29.3nC
Series:
MDmesh
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.2V
Height:
4.8mm
Width:
15.8 mm
Length:
10.4mm
Package Type:
H2PAK
Maximum Drain Source Resistance Rds:
9Ω
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
2.5A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Surface
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), Variant
Rds On (Max) @ Id, Vgs:
9Ohm @ 1.3A, 10V
title:
STH3N150-2
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STH3N150-2 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4250811
Drain to Source Voltage (Vdss):
1500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
140W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
939 pF @ 25 V
Mounting Type:
Surface Mount
Series:
PowerMESH™
Gate Charge (Qg) (Max) @ Vgs:
29.3 nC @ 10 V
Supplier Device Package:
H2PAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STH3N150
ECCN:
EAR99
