Forward Voltage Vf:
1.3V
Width:
4.6 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
30nC
Package Type:
TO-220FP
Maximum Continuous Drain Current Id:
10A
Product Type:
FDmesh II Power MOSFET
Maximum Drain Source Resistance Rds:
0.45Ω
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
600V
Channel Type:
Type N
Length:
10.4mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
90W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
±25 V
Series:
FDmesh
Height:
16.4mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
450mOhm @ 5A, 10V
title:
STF11NM60ND
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STF11NM60ND Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2035563
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
25W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
850 pF @ 50 V
Mounting Type:
Through Hole
Series:
FDmesh™ II
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
Supplier Device Package:
TO-220FP
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF11
ECCN:
EAR99
