Maximum Drain Source Voltage:
800 V
Typical Gate Charge @ Vgs:
43.6 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
150 W
Series:
MDmesh
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
5V
Height:
4.6mm
Width:
10.4mm
Length:
10.75mm
Maximum Drain Source Resistance:
400 mΩ
Package Type:
TO-263
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Continuous Drain Current:
11 A
Minimum Gate Threshold Voltage:
3V
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
400mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
43.6 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB11NM80T4 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/725407
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1630 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™
Supplier Device Package:
D2PAK
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB11
ECCN:
EAR99
This is manufactured by STMicroelectronics. The manufacturer part number is STB11NM80T4. It has a maximum of 800 v drain source voltage. With a typical gate charge at Vgs includes 43.6 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 150 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. The product carries 5v of maximum gate threshold voltage. In addition, the height is 4.6mm. Furthermore, the product is 10.4mm wide. Its accurate length is 10.75mm. It provides up to 400 mω maximum drain source resistance. The package is a sort of to-263. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. While 11 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 3v. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 400mohm @ 5.5a, 10v. The maximum gate charge and given voltages include 43.6 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 1630 pf @ 25 v. It has a long 13 weeks standard lead time. The product mdmesh™, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb11, a base product number of the product. The product is designated with the ear99 code number.
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