Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
45 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
125 W
Series:
MDmesh
Maximum Gate Source Voltage:
-25 V, +25 V
Maximum Gate Threshold Voltage:
4V
Height:
4.6mm
Width:
10.4mm
Length:
10.75mm
Minimum Gate Threshold Voltage:
2V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Maximum Drain Source Resistance:
190 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
190mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB23NM50N Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2504624
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1330 pF @ 50 V
standardLeadTime:
14 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™ II
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB23
ECCN:
EAR99
