Maximum Drain Source Voltage:
800 V
Typical Gate Charge @ Vgs:
250 nC @ 10 V
Mounting Type:
Screw Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.04 kW
Series:
HiperFET, Polar
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
5V
Height:
9.6mm
Width:
25.42mm
Length:
38.23mm
Maximum Drain Source Resistance:
140 mΩ
Package Type:
SOT-227
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
53 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
140mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
250 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
1040W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
18000 pF @ 25 V
standardLeadTime:
98 Weeks
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Polar
Supplier Device Package:
SOT-227B
Current - Continuous Drain (Id) @ 25°C:
53A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN60
ECCN:
EAR99
