Maximum Drain Source Voltage:
500 V
Typical Gate Charge @ Vgs:
260 nC @ 15 V
Mounting Type:
Screw Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
700 W
Series:
Linear
Maximum Gate Source Voltage:
-30 V, +30 V
Maximum Gate Threshold Voltage:
6V
Height:
9.6mm
Width:
25.07mm
Length:
38.2mm
Maximum Drain Source Resistance:
160 mΩ
Package Type:
SOT-227
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
46 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
4
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
160mOhm @ 500mA, 20V
Gate Charge (Qg) (Max) @ Vgs:
260 nC @ 15 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Tube
Drain to Source Voltage (Vdss):
500 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
7000 pF @ 25 V
standardLeadTime:
52 Weeks
Mounting Type:
Chassis Mount
Series:
Linear
Supplier Device Package:
SOT-227B
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTN46
ECCN:
EAR99
