STMicroelectronics STP60NF10
Product Information
Maximum Drain Source Voltage:
100 V
Typical Gate Charge @ Vgs:
104 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 W
Series:
STripFET II
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
4V
Height:
15.75mm
Width:
4.6mm
Length:
10.4mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Channel Type:
N
Maximum Drain Source Resistance:
23 mΩ
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
23mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs:
104 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STP60NF10 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/725372
Package:
Tube
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4270 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Through Hole
Series:
STripFET™ II
Supplier Device Package:
TO-220
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP60
ECCN:
EAR99
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship STP60NF10 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STP60NF10. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 104 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product stripfet ii, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. The product carries 4v of maximum gate threshold voltage. In addition, the height is 15.75mm. Furthermore, the product is 4.6mm wide. Its accurate length is 10.4mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of to-220. It consists of 1 elements per chip. While 80 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. The product is available in [Cannel Type] channel. It provides up to 23 mω maximum drain source resistance. It contains 3 pins. The product offers single transistor configuration. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 23mohm @ 40a, 10v. The maximum gate charge and given voltages include 104 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). The product's input capacitance at maximum includes 4270 pf @ 25 v. It has a long 26 weeks standard lead time. The product stripfet™ ii, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp60, a base product number of the product. The product is designated with the ear99 code number.
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