STMicroelectronics STB18NM80
Product Information
Maximum Continuous Drain Current:
17 A
Transistor Material:
Si
Width:
10.4mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
5V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
70 nC @ 10 V
Channel Type:
N
Length:
10.75mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
190 W
Series:
MDmesh
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.6mm
Maximum Drain Source Resistance:
295 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
295mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STB18NM80 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/2183663
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
190W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2070 pF @ 50 V
standardLeadTime:
13 Weeks
Mounting Type:
Surface Mount
Series:
MDmesh™
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
17A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB18
ECCN:
EAR99
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Yes. We ship STB18NM80 Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STB18NM80. While 17 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 10.4mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of d2pak (to-263). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 70 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.75mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 190 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.6mm. It provides up to 295 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 295mohm @ 8.5a, 10v. The maximum gate charge and given voltages include 70 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 190w (tc). The product's input capacitance at maximum includes 2070 pf @ 50 v. It has a long 13 weeks standard lead time. The product mdmesh™, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 17a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stb18, a base product number of the product. The product is designated with the ear99 code number.
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