Maximum Drain Source Voltage:
33 V
Typical Gate Charge @ Vgs:
34 nC @ 10 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
110 W
Series:
STripFET
Maximum Drain Source Resistance:
15 mΩ
Maximum Gate Threshold Voltage:
4V
Height:
15.75mm
Width:
4.6mm
Length:
10.4mm
Minimum Gate Threshold Voltage:
2V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
62 A
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
15mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs:
47 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STP62NS04Z Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/1039556
Drain to Source Voltage (Vdss):
33 V
Vgs (Max):
Clamped
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1330 pF @ 25 V
Mounting Type:
Through Hole
Series:
MESH OVERLAY™
Supplier Device Package:
TO-220
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
62A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP62
ECCN:
EAR99
