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STMicroelectronics STD10P6F6

STD10P6F6 STMicroelectronics
STD10P6F6
STD10P6F6
STMicroelectronics

Product Information

Maximum Continuous Drain Current:
10 A
Transistor Material:
Si
Width:
7.45mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
6.4 nC @ 10 V
Channel Type:
P
Length:
6.6mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
30 W
Series:
STripFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.38mm
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
160 mΩ
Manufacturer Standard Lead Time:
52 Weeks
Detailed Description:
P-Channel 60V 10A (Tc) 35W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
STD10
Gate Charge (Qg) (Max) @ Vgs:
6.4nC @ 10V
Rds On (Max) @ Id, Vgs:
160mOhm @ 5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
340pF @ 48V
Mounting Type:
Surface Mount
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Customer Reference:
Power Dissipation (Max):
35W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
Checking for live stock

This is manufactured by STMicroelectronics. The manufacturer part number is STD10P6F6. While 10 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 7.45mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 6.4 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 6.6mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 30 w maximum power dissipation. The product stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 2.38mm. Its forward diode voltage is 1.1v . It provides up to 160 mω maximum drain source resistance. It has typical 52 weeks of manufacturer standard lead time. It features p-channel 60v 10a (tc) 35w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: std10. The maximum gate charge and given voltages include 6.4nc @ 10v. It has a maximum Rds On and voltage of 160mohm @ 5a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The stmicroelectronics's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 340pf @ 48v. The product deepgate™, stripfet™ vi, is a highly preferred choice for users. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 10a (tc). The product carries maximum power dissipation 35w (tc). This product use mosfet (metal oxide) technology.

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STD10P6F6, STF10P6F6, STP10P6F6, STU10P6F6, P-Channel -60V, 0.13 Ohm typ., -10A STripFET F6 Power MOSFETs(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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STx10P6F6(Datasheets)

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Yes. We ship STD10P6F6 Internationally to many countries around the world.