Maximum Drain Source Voltage:
25 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
NexFET
Channel Type:
N
Maximum Gate Threshold Voltage:
1.6V
Maximum Drain Source Resistance:
2900000 Ω
Package Type:
VSONP
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
100 A
Transistor Material:
Si
Pin Count:
8
Manufacturer Standard Lead Time:
6 Weeks
Detailed Description:
N-Channel 25V 28A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6)
Vgs(th) (Max) @ Id:
1.9V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
CSD16403
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 4.5V
Rds On (Max) @ Id, Vgs:
2.8mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:
2660pF @ 12.5V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSONP (5x6)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
28A (Ta), 100A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta)
Technology:
MOSFET (Metal Oxide)
