STMicroelectronics STQ1HNK60R-AP
Product Information
Maximum Continuous Drain Current:
400 mA
Transistor Material:
Si
Width:
3.94mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
600 V
Maximum Gate Threshold Voltage:
3.7V
Package Type:
TO-92
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.25V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7 nC @ 10 V
Channel Type:
N
Length:
4.95mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
3 W
Series:
MDmesh, SuperMESH
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
4.95mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
8.5 Ω
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3.7V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Rds On (Max) @ Id, Vgs:
8.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STQ1HNK60R-AP Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/3945986
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
156 pF @ 25 V
standardLeadTime:
13 Weeks
Mounting Type:
Through Hole
Series:
SuperMESH™
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
400mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STQ1HNK60
ECCN:
EAR99
Checking for live stock
FAQs
Yes. You can also search STQ1HNK60R-AP on website for other similar products.
We accept all major payment methods for all products including ET11147434. Please check your shopping cart at the time of order.
You can order STMicroelectronics brand products with STQ1HNK60R-AP directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of STMicroelectronics STQ1HNK60R-AP. You can also check on our website or by contacting our customer support team for further order details on STMicroelectronics STQ1HNK60R-AP.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11147434 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "STMicroelectronics" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11147434.
Yes. We ship STQ1HNK60R-AP Internationally to many countries around the world.
This is manufactured by STMicroelectronics. The manufacturer part number is STQ1HNK60R-AP. While 400 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.94mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 3.7v of maximum gate threshold voltage. The package is a sort of to-92. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.25v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 4.95mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 3 w maximum power dissipation. The product mdmesh, supermesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 4.95mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 8.5 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3.7v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). It has a maximum Rds On and voltage of 8.5ohm @ 500ma, 10v. The maximum gate charge and given voltages include 10 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in cut tape (ct) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3w (tc). The product's input capacitance at maximum includes 156 pf @ 25 v. It has a long 13 weeks standard lead time. The product supermesh™, is a highly preferred choice for users. to-92-3 is the supplier device package value. The continuous current drain at 25°C is 400ma (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stq1hnk60, a base product number of the product. The product is designated with the ear99 code number.
Reviews
Don’t hesitate to ask questions for better clarification.