Forward Voltage Vf:
1.3V
Width:
7 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
10nC
Package Type:
SOT-223
Maximum Continuous Drain Current Id:
4A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
7mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
60V
Channel Type:
Type N
Length:
6.5mm
Standards/Approvals:
No
Pin Count:
4
Mount Type:
Surface
Maximum Power Dissipation Pd:
3.3W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
STN3N
Height:
1.6mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
100mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
STN3NF06 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/954075
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
315 pF @ 25 V
standardLeadTime:
26 Weeks
Mounting Type:
Surface Mount
Series:
STripFET™ II
Supplier Device Package:
SOT-223
Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STN3
ECCN:
EAR99
