Forward Voltage Vf:
1.2V
Width:
5.3 mm
Automotive Standard:
No
Typical Gate Charge Qg @ Vgs:
157nC
Package Type:
TO-247
Maximum Continuous Drain Current Id:
110A
Product Type:
MOSFET
Maximum Drain Source Resistance Rds:
24mΩ
Maximum Operating Temperature:
150°C
Maximum Drain Source Voltage Vds:
250V
Channel Type:
Type N
Length:
16.26mm
Standards/Approvals:
No
Pin Count:
3
Mount Type:
Through Hole
Maximum Power Dissipation Pd:
694W
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
20 V
Series:
Trench
Height:
21.46mm
Minimum Operating Temperature:
-55°C
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
24mOhm @ 55A, 10V
Gate Charge (Qg) (Max) @ Vgs:
157 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
250 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
694W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9400 pF @ 25 V
standardLeadTime:
45 Weeks
Mounting Type:
Through Hole
Series:
Trench
Supplier Device Package:
TO-247 (IXTH)
Current - Continuous Drain (Id) @ 25°C:
110A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXTH110
ECCN:
EAR99
