IXYS IXFN32N100Q3
Product Information
Maximum Continuous Drain Current:
28 A
Transistor Material:
Si
Width:
25.07mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1000 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
SOT-227
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
195 nC @ 10 V
Channel Type:
N
Length:
38.23mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Screw Mount
Maximum Power Dissipation:
780 W
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
-30 V, +30 V
Height:
9.6mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
320 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
320mOhm @ 16A, 10V
Gate Charge (Qg) (Max) @ Vgs:
195 nC @ 10 V
Vgs(th) (Max) @ Id:
6.5V @ 8mA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
1000 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
780W (Tc)
standardLeadTime:
46 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
9940 pF @ 25 V
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
SOT-227B
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN32
ECCN:
EAR99
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FAQs
Yes. You can also search IXFN32N100Q3 on website for other similar products.
We accept all major payment methods for all products including ET11024094. Please check your shopping cart at the time of order.
You can order IXYS brand products with IXFN32N100Q3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFN32N100Q3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFN32N100Q3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11024094 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11024094.
Yes. We ship IXFN32N100Q3 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFN32N100Q3. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 25.07mm wide. The product offers single transistor configuration. It has a maximum of 1000 v drain source voltage. The product carries 6.5v of maximum gate threshold voltage. The package is a sort of sot-227. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 195 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 38.23mm. It contains 4 pins. The product carries enhancement channel mode. The product is available in screw mount configuration. Provides up to 780 w maximum power dissipation. The product hiperfet, q3-class, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 9.6mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 320 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 320mohm @ 16a, 10v. The maximum gate charge and given voltages include 195 nc @ 10 v. The typical Vgs (th) (max) of the product is 6.5v @ 8ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 1000 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 780w (tc). It has a long 46 weeks standard lead time. The product's input capacitance at maximum includes 9940 pf @ 25 v. The product is available in chassis mount configuration. The product hiperfet™, q3 class, is a highly preferred choice for users. sot-227b is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 28a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfn32, a base product number of the product. The product is designated with the ear99 code number.
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