Automotive Standard:
No
Maximum Power Dissipation Pd:
20W
Product Type:
MOSFET
Maximum Drain Source Voltage Vds:
800V
Channel Mode:
Enhancement
Typical Gate Charge Qg @ Vgs:
9.5nC
Maximum Drain Source Resistance Rds:
4.5Ω
Maximum Gate Source Voltage Vgs:
30 V
Forward Voltage Vf:
1.5V
Height:
16.4mm
Width:
4.6 mm
Length:
10.4mm
Package Type:
TO-220
Minimum Operating Temperature:
-55°C
Standards/Approvals:
No
Maximum Continuous Drain Current Id:
2A
Channel Type:
Type N
Maximum Operating Temperature:
150°C
Pin Count:
3
Mount Type:
Through Hole
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
3 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 100µA
REACH Status:
REACH Unaffected
edacadModel:
STF2N80K5 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4515904
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
20W (Tc)
standardLeadTime:
14 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
95 pF @ 100 V
Mounting Type:
Through Hole
Series:
SuperMESH5™
Supplier Device Package:
TO-220FP
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STF2N80
ECCN:
EAR99
