FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
4.5Ohm @ 500mA, 10V
title:
STS1DNC45
Vgs(th) (Max) @ Id:
3.7V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
STS1DNC45 Models
Current - Continuous Drain (Id) @ 25°C:
400mA
edacadModelUrl:
/en/models/1039724
Configuration:
2 N-Channel (Dual)
Manufacturer:
STMicroelectronics
Drain to Source Voltage (Vdss):
450V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
13 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
160pF @ 25V
Mounting Type:
Surface Mount
Series:
SuperMESH™
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 10V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
1.6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STS1D
ECCN:
EAR99
Automotive Standard:
No
Maximum Power Dissipation Pd:
2W
Maximum Drain Source Voltage Vds:
450V
Channel Mode:
Enhancement
Maximum Gate Source Voltage Vgs:
30 V
Series:
SuperMESH
Forward Voltage Vf:
1.6V
Channel Type:
Dual N
Typical Gate Charge Qg @ Vgs:
10nC
Package Type:
SO-8
Minimum Operating Temperature:
-65°C
Maximum Drain Source Resistance Rds:
4.5Ω
Standards/Approvals:
RoHS
Maximum Continuous Drain Current Id:
0.4A
Product Type:
MOSFET
Maximum Operating Temperature:
150°C
Pin Count:
8
Mount Type:
Surface
