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STMicroelectronics STTH2002CG Dual SMT Switching Diode, Common Cathode, 200V 30A, 3-Pin D2PAK

STTH2002CG STMicroelectronics  Dual SMT Switching Diode, Common Cathode, 200V 30A, 3-Pin D2PAK
STTH2002CG
STTH2002CG
ET16768679
STMicroelectronics

Product Information

Mounting Type:
Surface Mount
Diode Technology:
Silicon Junction
Maximum Continuous Forward Current:
30A
Peak Reverse Recovery Time:
27ns
Peak Non-Repetitive Forward Surge Current:
90A
Maximum Forward Voltage Drop:
1.25V
Rectifier Type:
Switching
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
2
Diode Type:
Silicon Junction
Diode Configuration:
Common Cathode
Pin Count:
3
Peak Reverse Repetitive Voltage:
200V
Reverse Recovery Time (trr):
27 ns
HTSUS:
8541.10.0080
RoHS Status:
ROHS3 Compliant
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Diode Configuration:
1 Pair Common Cathode
edacadModel:
STTH2002CG Models
Operating Temperature - Junction:
175°C (Max)
REACH Status:
REACH Unaffected
edacadModelUrl:
/en/models/669399
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 10 A
Package:
Tube
Voltage - DC Reverse (Vr) (Max):
200 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Average Rectified (Io) (per Diode):
15A
Current - Reverse Leakage @ Vr:
10 µA @ 200 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK
Technology:
Standard
Base Product Number:
STTH2
ECCN:
EAR99
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This is Dual SMT Switching Diode Common Cathode 200V 30A 3-Pin D2PAK manufactured by STMicroelectronics. The manufacturer part number is STTH2002CG. The product is available in surface mount configuration. The product utilizes silicon junction diode technology. Furthermore, its maximum continuous forward current constitutes 30a. Moreover, it has a peak reverse recovery time about 27ns . Moreover, a bespoke product has 90a peak non-repetitive forward surge current. It features 1.25v of maximum forward voltage drop. This switching product is highly suited for various professionals in various settings. The package is a sort of d2pak (to-263). It consists of 2 elements per chip. It is designed with a silicon junction diode. The diode features a common cathode configuration. It contains 3 pins. While having the peak reverse repetitive 200v. It has a trr (reverse recovery time) of 27 ns. It is assigned with possible HTSUS value of 8541.10.0080. The product is rohs3 compliant. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The diode features a 1 pair common cathode configuration. The product operate at temperatures ranging from 175°c (max). In addition, it is reach unaffected. It has a robust speed of fast recovery =< 500ns, > 200ma (io). The product has a maximum forward voltage of 1.1 v @ 10 a. It is shipped in tube package . While it has maximum reverse voltage of 200 v. Its typical moisture sensitivity level is 1 (unlimited). The average rectified current at per diode is 15a. 10 µa @ 200 v is the reverse leakage value of a bespoke product. d2pak is the supplier device package value. This product use standard technology. Moreover, it corresponds to stth2, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
STTH2002C, High Efficiency Ultrafast Diode(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)
pdf icon
D2PAK Lead Modification 04/Oct/2013(PCN Design/Specification)
pdf icon
Mult Device OBS 2/Jun/2017(PCN Obsolescence/ EOL)
pdf icon
STTH2002C(Datasheets)

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