Minimum DC Current Gain:
100
Transistor Type:
PNP
Dimensions:
21.08 (Dia.) x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
175 W
Maximum Continuous Collector Current:
-30 A
Maximum Collector Base Voltage:
-250 V
Maximum Collector Emitter Voltage:
250 V
Maximum Base Emitter Saturation Voltage:
-3.8 V
Height:
8.51mm
Maximum Emitter Base Voltage:
-50 V
Package Type:
TO-204
Number of Elements per Chip:
2
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
-3.4 V
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJ11021
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 250V 15A 175W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 10A, 5V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.4V @ 150mA, 15A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
175W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is MJ11021G. It features up to 100 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 21.08 (dia.) x 8.51mm. The product is available in through hole configuration. Provides up to 175 w maximum power dissipation. The product has a maximum -30 a continuous collector current . Additionally, it has -250 v maximum collector base voltage. Whereas features a 250 v of collector emitter voltage (max). In addition, the product has a maximum -3.8 v base emitter saturation voltage . In addition, the height is 8.51mm. It features a -50 v of maximum emitter base voltage. The package is a sort of to-204. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum -3.4 v collector emitter saturation voltage . It has a maximum operating temperature of +200 °c. It contains 2 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mj11021. It features bipolar (bjt) transistor pnp - darlington 250v 15a 175w through hole to-204 (to-3). Furthermore, 400 @ 10a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The 3.4v @ 150ma, 15a is the maximum Vce saturation. to-204 (to-3) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, tray is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 175w. Moreover, the product comes in to-204aa, to-3. The maximum collector current includes 15a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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