Peak

Component Analyser DCA55 An intelligent component analyser (70 x 103 x 20mm) that can analyse a vast number of different component types including bipolar transistors, MOSFETs, thyristors, triacs, diodes, LEDs and others. It provides information such as component type, pin out and measurable parameters (such as gain, gate threshold voltages, voltage drops etc). Identification of diode networks such as common anode, common cathode, series and inverse parallel types Scrollable pages of information Identification of special component features such as diode protection or resistor shunts on transistors Identification of different LED types such as two or three terminal bicolour types Automatic component identification Automatic pin out identification Measurement of transistor gain from 2 to 65000 Measurement of MOSFET gate thresholds Measurement of semiconductor voltage drops for transistors, diodes and LEDs Auto and manual power off Parameter Min. Nom. Max. Units Peak test current into short circuit (Isc) -5.5 5.5 mA Peak test voltage across open circuit (Voc) -5.0 5.0 V Bipolar transistor collector test current (Ic) 2.3 2.5 2.7 mA Bipolar transistor collector-emitter test voltage (Vceo) 2.0 3.0 V Bipolar transistor measurable gain (Hfe) 4 65000 - Bipolar gain accuracy ± 3% of reading ± 5 Hfe EM MOSFET Min. Nom. Max. Units drain test current (Id) 2.5 mA drain-source test voltage (Vds) 2.0 3.0 V gate-source voltage range (Vgs) 0 5.0 mA gate-source threshold accuracy 4 % Silicon diode junction test current (If) 3.3 4.4 5.0 mA Triac/Thyristor gate current (Ig) 4.5 mA Triac/Thyristor test current 4.5 mA

Component Analyser DCA55 An intelligent component analyser (70 x 103 x 20mm) that can analyse a vast number of different component types including bipolar transistors, MOSFETs, thyristors, triacs, diodes, LEDs and others. It provides information such as component type, pin out and measurable parameters (such as gain, gate threshold voltages, voltage drops etc). Identification of diode networks such as common anode, common cathode, series and inverse parallel types Scrollable pages of information Identification of special component features such as diode protection or resistor shunts on transistors Identification of different LED types such as two or three terminal bicolour types Automatic component identification Automatic pin out identification Measurement of transistor gain from 2 to 65000 Measurement of MOSFET gate thresholds Measurement of semiconductor voltage drops for transistors, diodes and LEDs Auto and manual power off Parameter Min. Nom. Max. Units Peak test current into short circuit (Isc) -5.5 5.5 mA Peak test voltage across open circuit (Voc) -5.0 5.0 V Bipolar transistor collector test current (Ic) 2.3 2.5 2.7 mA Bipolar transistor collector-emitter test voltage (Vceo) 2.0 3.0 V Bipolar transistor measurable gain (Hfe) 4 65000 - Bipolar gain accuracy ± 3% of reading ± 5 Hfe EM MOSFET Min. Nom. Max. Units drain test current (Id) 2.5 mA drain-source test voltage (Vds) 2.0 3.0 V gate-source voltage range (Vgs) 0 5.0 mA gate-source threshold accuracy 4 % Silicon diode junction test current (If) 3.3 4.4 5.0 mA Triac/Thyristor gate current (Ig) 4.5 mA Triac/Thyristor test current 4.5 mA