Renesas Electronics America FA4F4M-T1B-A
Product Information
Resistor - Base (R1):
22 Ohms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 50mA, 5V
Transistor Type:
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
200mV @ 250µ, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Box
Resistor - Emitter Base (R2):
22 Ohms
Power - Max:
200mW
Customer Reference:
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Renesas Electronics America
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FAQs
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We accept all major payment methods for all products including ET18040729. Please check your shopping cart at the time of order.
You can order Renesas Electronics America brand products with FA4F4M-T1B-A directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single, Pre-Biased category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Renesas Electronics America FA4F4M-T1B-A. You can also check on our website or by contacting our customer support team for further order details on Renesas Electronics America FA4F4M-T1B-A.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET18040729 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Renesas Electronics America" products on our website by using Enrgtech's Unique Manufacturing Part Number ET18040729.
Yes. We ship FA4F4M-T1B-A Internationally to many countries around the world.
This is manufactured by Renesas Electronics America. The manufacturer part number is FA4F4M-T1B-A. Resistor - Base - 22 ohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 200mw. Furthermore, 60 @ 50ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The 200mv @ 250µ, 5ma is the maximum Vce saturation. The maximum collector emitter breakdown voltage of the product is 50v. In addition, box is the available packaging type of the product. Resistor - Emittor Base (R2) - 22 ohms. The maximum power of the product is 200mw. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The renesas electronics america's product offers user-desired applications.
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