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Diodes Inc ZXMN10A08GTA N-channel MOSFET, 2.9 A, 100 V, 3+Tab-Pin SOT-223

ZXMN10A08GTA Diodes Inc  N-channel MOSFET, 2.9 A, 100 V, 3+Tab-Pin SOT-223
ZXMN10A08GTA
ZXMN10A08GTA
ET16759909
ET16759909
Unclassified
DiodesZetex

Product Information

Category:
Power MOSFET
Dimensions:
6.7 x 3.7 x 1.8mm
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.7 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
405 pF@ 50 V
Length:
6.7mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
8 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.8mm
Typical Turn-On Delay Time:
3.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
300 mΩ
RoHs Compliant
Checking for live stock

This is Diodes Inc N-channel MOSFET 2.9 A 100 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZXMN10A08GTA. It is of power mosfet category . The given dimensions of the product include 6.7 x 3.7 x 1.8mm. While 2.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 405 pf@ 50 v . Its accurate length is 6.7mm. It contains 3+tab pins. Whereas, its typical turn-off delay time is about 8 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.8mm. In addition, it has a typical 3.4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 300 mω maximum drain source resistance.

pdf icon
MOSFET N-ch 2.9A 100V SOT223(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)

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FAQs

Yes. You can also search ZXMN10A08GTA on website for other similar products.
We accept all major payment methods for all products including ET16759909. Please check your shopping cart at the time of order.
You can order DiodesZetex brand products with ZXMN10A08GTA directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc ZXMN10A08GTA N-channel MOSFET, 2.9 A, 100 V, 3+Tab-Pin SOT-223. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc ZXMN10A08GTA N-channel MOSFET, 2.9 A, 100 V, 3+Tab-Pin SOT-223.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET16759909 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET16759909.
Yes. We ship ZXMN10A08GTA Internationally to many countries around the world.