Category:
Power MOSFET
Dimensions:
6.7 x 3.7 x 1.8mm
Maximum Continuous Drain Current:
2.9 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
SOT-223
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
7.7 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
405 pF@ 50 V
Length:
6.7mm
Pin Count:
3+Tab
Typical Turn-Off Delay Time:
8 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.9 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.8mm
Typical Turn-On Delay Time:
3.4 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
300 mΩ
This is Diodes Inc N-channel MOSFET 2.9 A 100 V 3+Tab-Pin SOT-223 manufactured by DiodesZetex. The manufacturer part number is ZXMN10A08GTA. It is of power mosfet category . The given dimensions of the product include 6.7 x 3.7 x 1.8mm. While 2.9 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.7mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of sot-223. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 7.7 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 405 pf@ 50 v . Its accurate length is 6.7mm. It contains 3+tab pins. Whereas, its typical turn-off delay time is about 8 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 3.9 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.8mm. In addition, it has a typical 3.4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 300 mω maximum drain source resistance.
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