ON Semiconductor NSVT65011MW6T1G
Product Information
Dimensions:
2.2 x 1.35 x 1mm
Maximum Collector Emitter Saturation Voltage:
600 mV
Width:
1.35mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Isolated
Maximum Operating Frequency:
100 MHz
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
950 mV
Maximum Emitter Base Voltage:
6 V
Length:
2.2mm
Maximum DC Collector Current:
100 mA
Pin Count:
6
Minimum DC Current Gain:
150
Mounting Type:
Surface Mount
Maximum Power Dissipation:
380 mW
Maximum Collector Emitter Voltage:
65 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
NSVT65011
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88 (SOT-363)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2mA, 5V
Transistor Type:
2 NPN (Dual)
Frequency - Transition:
100MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 100mA
Supplier Device Package:
SC-88 (SOT-363)
Voltage - Collector Emitter Breakdown (Max):
65V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
380mW
Customer Reference:
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
15nA (ICBO)
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
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Yes. We ship NSVT65011MW6T1G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NSVT65011MW6T1G. The given dimensions of the product include 2.2 x 1.35 x 1mm. The product has a maximum 600 mv collector emitter saturation voltage . Furthermore, the product is 1.35mm wide. The product complies with automotive standard - aec-q101. The product offers isolated transistor configuration. It carries 100 mhz of maximum operating frequency. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 80 v maximum collector base voltage. In addition, the product has a maximum 950 mv base emitter saturation voltage . It features a 6 v of maximum emitter base voltage. Its accurate length is 2.2mm. Moreover, it has a maximum DC collector current of 100 ma. It contains 6 pins. It features up to 150 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 380 mw maximum power dissipation. Whereas features a 65 v of collector emitter voltage (max). In addition, the height is 1mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 28 weeks of manufacturer standard lead time. Base Part Number: nsvt65011. It features bipolar (bjt) transistor array 2 npn (dual) 65v 100ma 100mhz 380mw surface mount sc-88 (sot-363). Furthermore, 200 @ 2ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The transition frequency of the product is 100mhz. The 600mv @ 5ma, 100ma is the maximum Vce saturation. sc-88 (sot-363) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 65v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 380mw. Moreover, the product comes in 6-tssop, sc-88, sot-363. The maximum collector current includes 100ma. In addition, 15na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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