ON Semiconductor FDMS3615S
Product Information
Category:
Power MOSFET
Dimensions:
5.1 x 6.1 x 1.05mm
Maximum Continuous Drain Current:
88 A, 89 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
25 V
Package Type:
PQFN
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19 nC @ 10 V, 31 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1326 pF@ 13 V, 2175 pF@ 13 V
Length:
5.1mm
Pin Count:
8
Typical Turn-Off Delay Time:
19 ns, 24 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Series:
PowerTrench, SyncFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.05mm
Typical Turn-On Delay Time:
7.7 ns, 9.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
4.6 mΩ, 7.9 mΩ
FET Feature:
Logic Level Gate
Base Part Number:
FDMS3615
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Asymmetrical 25V 16A, 18A 1W Surface Mount Power56
Input Capacitance (Ciss) (Max) @ Vds:
1765pF @ 13V
Gate Charge (Qg) (Max) @ Vgs:
27nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
PowerTrench®
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 16A, 10V
Supplier Device Package:
Power56
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual) Asymmetrical
Customer Reference:
Power - Max:
1W
Drain to Source Voltage (Vdss):
25V
Current - Continuous Drain (Id) @ 25°C:
16A, 18A
Manufacturer:
ON Semiconductor
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Yes. We ship FDMS3615S Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is FDMS3615S. It is of power mosfet category . The given dimensions of the product include 5.1 x 6.1 x 1.05mm. While 88 a, 89 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.1mm wide. The product offers series transistor configuration. It has a maximum of 25 v drain source voltage. The package is a sort of pqfn. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 19 nc @ 10 v, 31 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1326 pf@ 13 v, 2175 pf@ 13 v . Its accurate length is 5.1mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 19 ns, 24 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 2.3 w maximum power dissipation. The product powertrench, syncfet, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.05mm. In addition, it has a typical 7.7 ns, 9.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 4.6 mω, 7.9 mω maximum drain source resistance. The FET features of the product include logic level gate. Base Part Number: fdms3615. It features mosfet array 2 n-channel (dual) asymmetrical 25v 16a, 18a 1w surface mount power56. The product's input capacitance at maximum includes 1765pf @ 13v. The maximum gate charge and given voltages include 27nc @ 10v. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product powertrench®, is a highly preferred choice for users. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 5.8mohm @ 16a, 10v. power56 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual) asymmetrical. The maximum power of the product is 1w. The product has a 25v drain to source voltage. The continuous current drain at 25°C is 16a, 18a. The on semiconductor's product offers user-desired applications.
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