Dimensions:
2.93 x 1.3 x 1mm
Maximum Collector Emitter Saturation Voltage:
-0.5 V
Width:
1.3mm
Transistor Configuration:
Single
Maximum Operating Frequency:
180 MHz
Package Type:
CPA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-55 V
Maximum Base Emitter Saturation Voltage:
-1 V
Maximum Emitter Base Voltage:
-5 V
Length:
2.93mm
Maximum DC Collector Current:
150 mA
Pin Count:
3
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Voltage:
50 V
Height:
1mm
Base Part Number:
2SA1179
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 200mW Surface Mount 3-CP
DC Current Gain (hFE) (Min) @ Ic, Vce:
135 @ 1mA, 6V
Transistor Type:
PNP
Frequency - Transition:
180MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
Supplier Device Package:
3-CP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
Power - Max:
200mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
150mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2SA1179N6-TB-E. The given dimensions of the product include 2.93 x 1.3 x 1mm. The product has a maximum -0.5 v collector emitter saturation voltage . Furthermore, the product is 1.3mm wide. The product offers single transistor configuration. It carries 180 mhz of maximum operating frequency. The package is a sort of cpa. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has -55 v maximum collector base voltage. In addition, the product has a maximum -1 v base emitter saturation voltage . It features a -5 v of maximum emitter base voltage. Its accurate length is 2.93mm. Moreover, it has a maximum DC collector current of 150 ma. It contains 3 pins. It features up to 200 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 200 mw maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 1mm. Base Part Number: 2sa1179. It features bipolar (bjt) transistor pnp 50v 150ma 180mhz 200mw surface mount 3-cp. Furthermore, 135 @ 1ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 180mhz. The 500mv @ 5ma, 50ma is the maximum Vce saturation. 3-cp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 200mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 150ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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