Dimensions:
1.05 x 0.85 x 0.45mm
Maximum Continuous Drain Current:
220 mA
Transistor Material:
Si
Width:
0.85mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1V
Maximum Drain Source Resistance:
4.5 Ω
Package Type:
SOT-963
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.4V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.38 nC @ 4.5 V
Channel Type:
N, P
Typical Input Capacitance @ Vds:
22.6 pF @ 15 V
Length:
1.05mm
Pin Count:
6
Typical Turn-Off Delay Time:
21 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
350 mW
Maximum Gate Source Voltage:
-12 V, +12 V
Height:
0.45mm
Typical Turn-On Delay Time:
3.2 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
