Category:
Power MOSFET
Dimensions:
6.7 x 3.7 x 1.45mm
Maximum Continuous Drain Current:
1.5 A
Transistor Material:
Si
Width:
3.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Drain Source Resistance:
540 mΩ
Package Type:
SOT-223
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
8.3 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
180 pF@ 25 V
Length:
6.7mm
Pin Count:
4
Typical Turn-Off Delay Time:
15 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2 W
Maximum Gate Source Voltage:
±20 V
Height:
1.45mm
Typical Turn-On Delay Time:
6.9 ns
Minimum Operating Temperature:
-55 °C
