Category:
Power MOSFET
Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
2.3 A
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Drain Source Resistance:
145 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.1 nC @ 4.5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
365 pF @ -15 V
Length:
2.2mm
Pin Count:
6
Typical Turn-Off Delay Time:
25 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.78 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Typical Turn-On Delay Time:
24 ns
Minimum Operating Temperature:
-55 °C
