IXYS IXFN62N80Q3
Product Information
Category:
Power MOSFET
Dimensions:
38.23 x 25.07 x 9.6mm
Maximum Continuous Drain Current:
49 A
Transistor Material:
Si
Width:
25.07mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
6.5V
Package Type:
SOT-227B
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
270 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
13600 pF @ 25 V
Length:
38.23mm
Pin Count:
4
Typical Turn-Off Delay Time:
62 ns
Mounting Type:
Panel Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
780 W
Series:
HiperFET, Q3-Class
Maximum Gate Source Voltage:
±30 V
Height:
9.6mm
Typical Turn-On Delay Time:
54 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
140 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
6.5V @ 8mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-227-4, miniBLOC
Rds On (Max) @ Id, Vgs:
140mOhm @ 31A, 10V
Gate Charge (Qg) (Max) @ Vgs:
270 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
960W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
13600 pF @ 25 V
standardLeadTime:
98 Weeks
Mounting Type:
Chassis Mount
Series:
HiPerFET™, Q3 Class
Supplier Device Package:
SOT-227B
Current - Continuous Drain (Id) @ 25°C:
49A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IXFN62
ECCN:
EAR99
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FAQs
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You can order IXYS brand products with IXFN62N80Q3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of IXYS IXFN62N80Q3. You can also check on our website or by contacting our customer support team for further order details on IXYS IXFN62N80Q3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11832204 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "IXYS" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11832204.
Yes. We ship IXFN62N80Q3 Internationally to many countries around the world.
This is manufactured by IXYS. The manufacturer part number is IXFN62N80Q3. It is of power mosfet category . The given dimensions of the product include 38.23 x 25.07 x 9.6mm. While 49 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 25.07mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 6.5v of maximum gate threshold voltage. The package is a sort of sot-227b. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 270 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 13600 pf @ 25 v . Its accurate length is 38.23mm. It contains 4 pins. Whereas, its typical turn-off delay time is about 62 ns . The product is available in panel mount configuration. The product carries enhancement channel mode. Provides up to 780 w maximum power dissipation. The product hiperfet, q3-class, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.6mm. In addition, it has a typical 54 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 140 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 6.5v @ 8ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-227-4, minibloc. It has a maximum Rds On and voltage of 140mohm @ 31a, 10v. The maximum gate charge and given voltages include 270 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960w (tc). The product's input capacitance at maximum includes 13600 pf @ 25 v. It has a long 98 weeks standard lead time. The product is available in chassis mount configuration. The product hiperfet™, q3 class, is a highly preferred choice for users. sot-227b is the supplier device package value. The continuous current drain at 25°C is 49a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfn62, a base product number of the product. The product is designated with the ear99 code number.
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