Microsemi Corporation JANTXV2N5794
Product Information
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 600mW Through Hole TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
2 NPN (Dual)
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
900mV @ 30mA, 300mA
Series:
Military, MIL-PRF-19500/495
Package / Case:
TO-78-6 Metal Can
Supplier Device Package:
TO-78-6
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
600mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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You can order Microsemi Corporation brand products with JANTXV2N5794 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Arrays category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JANTXV2N5794. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JANTXV2N5794.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET10875916 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET10875916.
Yes. We ship JANTXV2N5794 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JANTXV2N5794. The maximum collector current includes 600ma. It features bipolar (bjt) transistor array 2 npn (dual) 40v 600ma 600mw through hole to-78-6. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) type. The product is available in through hole configuration. The 900mv @ 30ma, 300ma is the maximum Vce saturation. The product military, mil-prf-19500/495, is a highly preferred choice for users. Moreover, the product comes in to-78-6 metal can. to-78-6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 600mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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