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Diodes Inc DMN3190LDW-13 Dual N-channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363

DMN3190LDW-13 Diodes Inc  Dual N-channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363
DMN3190LDW-13
DMN3190LDW-13
ET14108445
ET14108445
Unclassified
DiodesZetex

Product Information

Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.8V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
87 pF @ 20 V
Length:
2.2mm
Pin Count:
6
Typical Turn-Off Delay Time:
30.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
320 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Typical Turn-On Delay Time:
4.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
335 mΩ
RoHs Compliant
Checking for live stock

This is Diodes Inc Dual N-channel MOSFET 1.3 A 30 V 6-Pin SOT-363 manufactured by DiodesZetex. The manufacturer part number is DMN3190LDW-13. The given dimensions of the product include 2.2 x 1.35 x 1mm. While 1.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.35mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.8v of maximum gate threshold voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 87 pf @ 20 v . Its accurate length is 2.2mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 30.3 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 320 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. In addition, it has a typical 4.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 335 mω maximum drain source resistance.

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We accept all major payment methods for all products including ET14108445. Please check your shopping cart at the time of order.
You can order DiodesZetex brand products with DMN3190LDW-13 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Unclassified category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Diodes Inc DMN3190LDW-13 Dual N-channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363. You can also check on our website or by contacting our customer support team for further order details on Diodes Inc DMN3190LDW-13 Dual N-channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14108445 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "DiodesZetex" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14108445.
Yes. We ship DMN3190LDW-13 Internationally to many countries around the world.