Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
1.3 A
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.8V
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
2 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
87 pF @ 20 V
Length:
2.2mm
Pin Count:
6
Typical Turn-Off Delay Time:
30.3 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
320 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1mm
Typical Turn-On Delay Time:
4.5 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
335 mΩ
This is Diodes Inc Dual N-channel MOSFET 1.3 A 30 V 6-Pin SOT-363 manufactured by DiodesZetex. The manufacturer part number is DMN3190LDW-13. The given dimensions of the product include 2.2 x 1.35 x 1mm. While 1.3 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.35mm wide. The product offers isolated transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.8v of maximum gate threshold voltage. The package is a sort of sot-363 (sc-88). It consists of 2 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 2 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 87 pf @ 20 v . Its accurate length is 2.2mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 30.3 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 320 mw maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1mm. In addition, it has a typical 4.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 335 mω maximum drain source resistance.
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