Vishay SI1912EDH-T1-E3 Dual N-channel MOSFET Transistor, 1.13 A, 20 V, 6-Pin SOT-363
Product Information
Category:
Power MOSFET
Maximum Drain Source Voltage:
20 V
Typical Turn-Off Delay Time:
350 ns
Dimensions:
2.05 x 1.25 x 0.9mm
Channel Mode:
Enhancement
Typical Turn-On Delay Time:
45 ns
Maximum Gate Source Voltage:
±12 V
Height:
0.9mm
Width:
1.25mm
Length:
2.05mm
Maximum Drain Source Resistance:
280 mΩ
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.13 A
Minimum Gate Threshold Voltage:
0.45V
Mounting Type:
Surface Mount
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
6
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This is Dual N-channel MOSFET Transistor 1.13 A 20 V 6-Pin SOT-363 manufactured by Vishay. The manufacturer part number is SI1912EDH-T1-E3. It is of power mosfet category . It has a maximum of 20 v drain source voltage. Whereas, its typical turn-off delay time is about 350 ns . The given dimensions of the product include 2.05 x 1.25 x 0.9mm. The product carries enhancement channel mode. In addition, it has a typical 45 ns turn-on delay time . It features a maximum gate source voltage of ±12 v. In addition, the height is 0.9mm. Furthermore, the product is 1.25mm wide. Its accurate length is 2.05mm. It provides up to 280 mω maximum drain source resistance. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 1.13 a of maximum continuous drain current. Whereas its minimum gate threshold voltage includes 0.45v. The product is available in surface mount configuration. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 6 pins.
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