Category:
Power MOSFET
Dimensions:
10.36 x 4.57 x 15.95mm
Maximum Continuous Drain Current:
2 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
3.9V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
150 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
290 pF @ 100 V
Length:
10.36mm
Pin Count:
3
Typical Turn-Off Delay Time:
72 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
42 W
Series:
CoolMOS C3
Maximum Gate Source Voltage:
±30 V
Height:
15.95mm
Typical Turn-On Delay Time:
25 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.7 Ω
This is N-channel MOSFET 2 A 800 V CoolMOS C3 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is SPP02N80C3. It is of power mosfet category . The given dimensions of the product include 10.36 x 4.57 x 15.95mm. While 2 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.57mm wide. The product offers single transistor configuration. It has a maximum of 800 v drain source voltage. The product carries 3.9v of maximum gate threshold voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.1v. It has a maximum operating temperature of 150 °c. With a typical gate charge at Vgs includes 12 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 290 pf @ 100 v . Its accurate length is 10.36mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 72 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 42 w maximum power dissipation. The product coolmos c3, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 15.95mm. In addition, it has a typical 25 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 2.7 ω maximum drain source resistance.
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