Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
160 mA
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.26 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
24 pF @ -25 V
Length:
2.2mm
Pin Count:
6
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.32 W
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.5 Ω