Nexperia BSS84AKS Dual P-channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363

BSS84AKS Nexperia  Dual P-channel MOSFET, 160 mA, 50 V, 6-Pin SOT-363
Nexperia

Product Information

Dimensions:
2.2 x 1.35 x 1mm
Maximum Continuous Drain Current:
160 mA
Transistor Material:
Si
Width:
1.35mm
Transistor Configuration:
Isolated
Maximum Drain Source Voltage:
50 V
Maximum Gate Threshold Voltage:
2.1V
Package Type:
SOT-363
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
1.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
0.26 nC @ 5 V
Channel Type:
P
Typical Input Capacitance @ Vds:
24 pF @ -25 V
Length:
2.2mm
Pin Count:
6
Typical Turn-Off Delay Time:
48 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
0.32 W
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Typical Turn-On Delay Time:
13 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7.5 Ω
RoHs Compliant
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This is Dual P-channel MOSFET 160 mA 50 V 6-Pin SOT-363 manufactured by Nexperia. The manufacturer part number is BSS84AKS. The given dimensions of the product include 2.2 x 1.35 x 1mm. While 160 ma of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 1.35mm wide. The product offers isolated transistor configuration. It has a maximum of 50 v drain source voltage. The product carries 2.1v of maximum gate threshold voltage. The package is a sort of sot-363. It consists of 2 elements per chip. Whereas its minimum gate threshold voltage includes 1.1v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 0.26 nc @ 5 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 24 pf @ -25 v . Its accurate length is 2.2mm. It contains 6 pins. Whereas, its typical turn-off delay time is about 48 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 0.32 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1mm. In addition, it has a typical 13 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 7.5 ω maximum drain source resistance.

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BSS84AKS, 50V, 160mA Dual P-Channel Trench MOSFET Data Sheet(Technical Reference)

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