Category:
Power MOSFET
Dimensions:
16.13 x 5.21 x 21.1mm
Maximum Continuous Drain Current:
24 A
Transistor Material:
SiC
Width:
5.21mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
4.1V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3.1V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
47.1 nC @ 20 V
Channel Type:
N
Typical Input Capacitance @ Vds:
928 pF @ 800 V
Length:
16.13mm
Pin Count:
3
Typical Turn-Off Delay Time:
38 ns
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
134 W
Maximum Gate Source Voltage:
-5 V, +25 V
Height:
21.1mm
Typical Turn-On Delay Time:
8.8 ns
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
240 mΩ
