MagnaChip MDV1524URH N-channel MOSFET, 42 A, 30 V, 8-Pin PowerDFN33
Product Information
Dimensions:
3.2 x 3.2 x 0.8mm
Maximum Continuous Drain Current:
42 A
Transistor Material:
Si
Width:
3.2mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
2.7V
Package Type:
PowerDFN33
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
15.9 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
1019 pF @ 15 V
Length:
3.2mm
Pin Count:
8
Forward Transconductance:
19S
Typical Turn-Off Delay Time:
25.1 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
25.2 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.8mm
Typical Turn-On Delay Time:
7.5 ns
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.1V
Maximum Drain Source Resistance:
11.7 mΩ
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You will get a confirmation email regarding your order of MagnaChip MDV1524URH N-channel MOSFET, 42 A, 30 V, 8-Pin PowerDFN33. You can also check on our website or by contacting our customer support team for further order details on MagnaChip MDV1524URH N-channel MOSFET, 42 A, 30 V, 8-Pin PowerDFN33.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET13910435 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "MagnaChip" products on our website by using Enrgtech's Unique Manufacturing Part Number ET13910435.
Yes. We ship MDV1524URH Internationally to many countries around the world.
This is N-channel MOSFET 42 A 30 V 8-Pin PowerDFN33 manufactured by MagnaChip. The manufacturer part number is MDV1524URH. The given dimensions of the product include 3.2 x 3.2 x 0.8mm. While 42 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 3.2mm wide. The product offers single transistor configuration. It has a maximum of 30 v drain source voltage. The product carries 2.7v of maximum gate threshold voltage. The package is a sort of powerdfn33. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 15.9 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1019 pf @ 15 v . Its accurate length is 3.2mm. It contains 8 pins. The forward transconductance is 19s . Whereas, its typical turn-off delay time is about 25.1 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 25.2 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 0.8mm. In addition, it has a typical 7.5 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.1v . It provides up to 11.7 mω maximum drain source resistance.
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